Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 41 397,50

(exc. VAT)

R 47 607,50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500R 16.559R 41,397.50
5000 - 5000R 16.145R 40,362.50
7500 +R 15.661R 39,152.50

*price indicative

RS stock no.:
218-3054
Mfr. Part No.:
IPD90N10S4L06ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

75nC

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.73mm

Height

2.41mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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