Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252
- RS stock no.:
- 215-2501
- Mfr. Part No.:
- IPD100N06S403ATMA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 33 730,00
(exc. VAT)
R 38 790,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 31 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 13.492 | R 33,730.00 |
| 5000 - 5000 | R 13.154 | R 32,885.00 |
| 7500 + | R 12.76 | R 31,900.00 |
*price indicative
- RS stock no.:
- 215-2501
- Mfr. Part No.:
- IPD100N06S403ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS®-T2 Power-Transistor has 100V maximum drain source voltage, N-Channel, Automotive MOSFET, with DPAK(TO-252)package.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
Ultra Low RDSon
Ultra High ID
Related links
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin DPAK IPD100N06S403ATMA2
- Vishay N-Channel MOSFET 60 V, 3-Pin DPAK SQD50034E_GE3
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin DPAK IPD031N06L3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin DPAK IPD034N06N3GATMA1
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 60 V, 3-Pin DPAK SQD50034EL_GE3
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin DPAK IPD100N04S402ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin DPAK IPD90N06S4L03ATMA2
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin DPAK IPD25N06S4L30ATMA2