Infineon OptiMOS Type N-Channel MOSFET, 13 A, 34 V Enhancement, 8-Pin TDSON BSC0996NSATMA1

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Subtotal (1 pack of 50 units)*

R 671,40

(exc. VAT)

R 772,10

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50R 13.428R 671.40
100 - 100R 13.092R 654.60
150 - 200R 12.70R 635.00
250 - 450R 12.192R 609.60
500 +R 11.704R 585.20

*price indicative

Packaging Options:
RS stock no.:
214-8979
Mfr. Part No.:
BSC0996NSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

34V

Package Type

TDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.2nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.1mm

Length

5.49mm

Width

6.35 mm

Automotive Standard

No

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

It comes with Improved switching behaviour

100% Avalanche tested

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