Infineon HEXFET Type N-Channel MOSFET, 88 A, 100 V, 3-Pin TO-263 IRFS4410TRLPBF
- RS stock no.:
- 214-4459
- Mfr. Part No.:
- IRFS4410TRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 392,68
(exc. VAT)
R 451,58
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 40 unit(s) shipping from 29 December 2025
- Plus 3,615 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 78.536 | R 392.68 |
| 10 - 95 | R 76.572 | R 382.86 |
| 100 - 245 | R 74.274 | R 371.37 |
| 250 - 495 | R 71.304 | R 356.52 |
| 500 + | R 68.452 | R 342.26 |
*price indicative
- RS stock no.:
- 214-4459
- Mfr. Part No.:
- IRFS4410TRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 88A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 88A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET Power MOSFET has improved Gate, Avalanche and Dynamic dv/dt Ruggedness. It is suitable for high efficiency synchronous rectification in SMPS.
It is Halogen-free according to IEC61249-2-21
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