Infineon HEXFET Type N-Channel MOSFET, 88 A, 100 V TO-263 IRFB4410PBF

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Subtotal (1 pack of 2 units)*

R 35,55

(exc. VAT)

R 40,882

(inc. VAT)

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In Stock
  • 2,942 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 17.775R 35.55
10 - 18R 17.33R 34.66
20 - 48R 16.81R 33.62
50 - 98R 16.14R 32.28
100 +R 15.495R 30.99

*price indicative

Packaging Options:
RS stock no.:
257-5823
Mfr. Part No.:
IRFB4410PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

PCB

Maximum Drain Source Resistance Rds

10mΩ

Maximum Power Dissipation Pd

200W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard through-hole power package

High-current rating


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