Infineon HEXFET Type N-Channel MOSFET, 88 A, 100 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

R 27 600,00

(exc. VAT)

R 31 744,00

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800R 34.50R 27,600.00
1600 - 1600R 33.637R 26,909.60
2400 +R 32.628R 26,102.40

*price indicative

RS stock no.:
214-4458
Mfr. Part No.:
IRFS4410TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10mΩ

Maximum Power Dissipation Pd

200W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET Power MOSFET has improved Gate, Avalanche and Dynamic dv/dt Ruggedness. It is suitable for high efficiency synchronous rectification in SMPS.

It is Halogen-free according to IEC61249-2-21

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