Infineon 500V CoolMOS CE Type N-Channel MOSFET, 2.2 A, 500 V Enhancement, 3-Pin TO-252 IPD50R2K0CEAUMA1

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Subtotal (1 pack of 50 units)*

R 124,05

(exc. VAT)

R 142,65

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50R 2.481R 124.05
100 - 100R 2.419R 120.95
150 - 200R 2.346R 117.30
250 - 450R 2.252R 112.60
500 +R 2.162R 108.10

*price indicative

Packaging Options:
RS stock no.:
214-4379
Mfr. Part No.:
IPD50R2K0CEAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-252

Series

500V CoolMOS CE

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

33W

Typical Gate Charge Qg @ Vgs

6nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.83V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.35mm

Width

6.42 mm

Length

6.65mm

Automotive Standard

No

This Infineon 500 V Cool MOS CE MOSFET is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards.

It provides very high commutation ruggedness

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