Infineon 500V CoolMOS CE Type N-Channel MOSFET, 2.2 A, 500 V Enhancement, 3-Pin TO-252 IPD50R2K0CEAUMA1
- RS stock no.:
- 214-4379
- Mfr. Part No.:
- IPD50R2K0CEAUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 253,65
(exc. VAT)
R 291,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,000 unit(s) shipping from 17 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 5.073 | R 253.65 |
| 100 - 100 | R 4.946 | R 247.30 |
| 150 - 200 | R 4.797 | R 239.85 |
| 250 - 450 | R 4.606 | R 230.30 |
| 500 + | R 4.421 | R 221.05 |
*price indicative
- RS stock no.:
- 214-4379
- Mfr. Part No.:
- IPD50R2K0CEAUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | 500V CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.83V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.42 mm | |
| Height | 2.35mm | |
| Length | 6.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series 500V CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.83V | ||
Maximum Operating Temperature 150°C | ||
Width 6.42 mm | ||
Height 2.35mm | ||
Length 6.65mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon 500 V Cool MOS CE MOSFET is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards.
It provides very high commutation ruggedness
Related links
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