Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-263 IPB60R120P7ATMA1

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Subtotal (1 pack of 5 units)*

R 213,17

(exc. VAT)

R 245,145

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 42.634R 213.17
10 - 95R 41.568R 207.84
100 - 245R 40.32R 201.60
250 - 495R 38.708R 193.54
500 +R 37.16R 185.80

*price indicative

Packaging Options:
RS stock no.:
214-4368
Mfr. Part No.:
IPB60R120P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

95W

Typical Gate Charge Qg @ Vgs

36nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

10.02mm

Height

4.5mm

Standards/Approvals

No

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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