DiodesZetex DMN10H220LDV Type N-Channel MOSFET, 10.5 A, 100 V Enhancement, 8-Pin PowerDI3333 DMN10H220LDV-7
- RS stock no.:
- 213-9149
- Mfr. Part No.:
- DMN10H220LDV-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 178,15
(exc. VAT)
R 204,875
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 06 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.126 | R 178.15 |
| 50 - 75 | R 6.948 | R 173.70 |
| 100 - 225 | R 6.74 | R 168.50 |
| 250 - 975 | R 6.47 | R 161.75 |
| 1000 + | R 6.212 | R 155.30 |
*price indicative
- RS stock no.:
- 213-9149
- Mfr. Part No.:
- DMN10H220LDV-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI3333 | |
| Series | DMN10H220LDV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 222mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.85mm | |
| Width | 3.4 mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI3333 | ||
Series DMN10H220LDV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 222mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.85mm | ||
Width 3.4 mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMN10H220LDV series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
Low input capacitance
Fast switching speed
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