DiodesZetex DMTH69 Type N-Channel MOSFET, 45.4 A, 60 V Enhancement, 8-Pin PowerDI3333
- RS stock no.:
- 206-0167
- Mfr. Part No.:
- DMTH69M8LFVWQ-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 reel of 2000 units)*
R 9 418,00
(exc. VAT)
R 10 830,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 8000 | R 4.709 | R 9,418.00 |
| 10000 - 22000 | R 4.591 | R 9,182.00 |
| 24000 + | R 4.453 | R 8,906.00 |
*price indicative
- RS stock no.:
- 206-0167
- Mfr. Part No.:
- DMTH69M8LFVWQ-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI3333 | |
| Series | DMTH69 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 3.6W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 33.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Width | 3.2 mm | |
| Length | 3.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI3333 | ||
Series DMTH69 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 3.6W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 33.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Width 3.2 mm | ||
Length 3.2mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 60V,8 pin N channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and DC to DC converter. Its gate-source voltage is 16V with 3.67 W thermal power dissipation.
Low RDS(ON) – ensures on-state losses are minimized
Rated to +175°C ideal for high ambient temperature environment
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