DiodesZetex DMG7430LFG Type N-Channel MOSFET, 10.5 A, 30 V Enhancement, 8-Pin PowerDI3333
- RS stock no.:
- 122-1465
- Mfr. Part No.:
- DMG7430LFG-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 2000 units)*
R 4 534,00
(exc. VAT)
R 5 214,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 44,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | R 2.267 | R 4,534.00 |
| 4000 - 6000 | R 2.211 | R 4,422.00 |
| 8000 - 18000 | R 2.144 | R 4,288.00 |
| 20000 - 38000 | R 2.059 | R 4,118.00 |
| 40000 + | R 1.976 | R 3,952.00 |
*price indicative
- RS stock no.:
- 122-1465
- Mfr. Part No.:
- DMG7430LFG-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI3333 | |
| Series | DMG7430LFG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26.7nC | |
| Forward Voltage Vf | -1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.35mm | |
| Height | 0.85mm | |
| Width | 3.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI3333 | ||
Series DMG7430LFG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26.7nC | ||
Forward Voltage Vf -1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.35mm | ||
Height 0.85mm | ||
Width 3.35 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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