Toshiba TPHR8504PL N-Channel MOSFET, 150 A, 40 V Enhancement, 8-Pin SOP TPHR8504PL,L1Q(M
- RS stock no.:
- 206-9797
- Mfr. Part No.:
- TPHR8504PL,L1Q(M
- Manufacturer:
- Toshiba
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 237,75
(exc. VAT)
R 273,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,420 unit(s) shipping from 06 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 47.55 | R 237.75 |
| 50 - 495 | R 46.362 | R 231.81 |
| 500 - 995 | R 44.972 | R 224.86 |
| 1000 - 2495 | R 43.174 | R 215.87 |
| 2500 + | R 41.448 | R 207.24 |
*price indicative
- RS stock no.:
- 206-9797
- Mfr. Part No.:
- TPHR8504PL,L1Q(M
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TPHR8504PL | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 103nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5mm | |
| Length | 6mm | |
| Standards/Approvals | No | |
| Height | 900μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TPHR8504PL | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 103nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 150°C | ||
Width 5mm | ||
Length 6mm | ||
Standards/Approvals No | ||
Height 900μm | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties. It is mainly used in high-efficiency DC-DC converters, switching voltage regulators and motor drivers.
Low drain-source on-resistance 0.7 m?
Storage temperature -55 to 175°C
Related links
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