Toshiba TPH1R306PL Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin SOP TPH1R306PL,L1Q(M
- RS stock no.:
- 206-9790
- Mfr. Part No.:
- TPH1R306PL,L1Q(M
- Manufacturer:
- Toshiba
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Subtotal (1 pack of 5 units)*
R 264,95
(exc. VAT)
R 304,70
(inc. VAT)
Add 30 units to get free delivery
In Stock
- 3,830 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 52.99 | R 264.95 |
| 50 - 495 | R 51.666 | R 258.33 |
| 500 - 995 | R 50.116 | R 250.58 |
| 1000 - 2495 | R 48.112 | R 240.56 |
| 2500 + | R 46.188 | R 230.94 |
*price indicative
- RS stock no.:
- 206-9790
- Mfr. Part No.:
- TPH1R306PL,L1Q(M
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOP | |
| Series | TPH1R306PL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6mm | |
| Height | 0.9mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOP | ||
Series TPH1R306PL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6mm | ||
Height 0.9mm | ||
Width 5 mm | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties. It is mainly used in high-efficiency DC-DC converters, switching voltage regulators and motor drivers.
Low drain-source on-resistance 1.0 m?
Storage temperature -55 to 175°C
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