Vishay Siliconix TrenchFET Type N-Channel MOSFET, 150 A, 40 V Enhancement, 8-Pin TO-263 SQM40022EM_GE3
- RS stock no.:
- 178-3948
- Mfr. Part No.:
- SQM40022EM_GE3
- Manufacturer:
- Vishay Siliconix
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 253,82
(exc. VAT)
R 291,89
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 1,400 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 25.382 | R 253.82 |
| 50 - 90 | R 24.747 | R 247.47 |
| 100 - 490 | R 24.005 | R 240.05 |
| 500 + | R 23.045 | R 230.45 |
*price indicative
- RS stock no.:
- 178-3948
- Mfr. Part No.:
- SQM40022EM_GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 11.3mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 11.3mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Exempt
- COO (Country of Origin):
- TW
TrenchFET® power MOSFET
Package with low thermal resistance
Related links
- Vishay Siliconix TrenchFET N-Channel MOSFET 40 V, 7-Pin D2PAK SQM40022EM_GE3
- Vishay Siliconix TrenchFET N-Channel MOSFET 40 V, 7-Pin D2PAK SQM40016EM_GE3
- Vishay Siliconix TrenchFET N-Channel MOSFET 150 V, 4-Pin PowerPAK SO-8L SQJ872EP-T1_GE3
- Vishay Siliconix TrenchFET N-Channel MOSFET 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3
- Vishay Siliconix TrenchFET N-Channel MOSFET 25 V, 8-Pin 1212 SiSS02DN-T1-GE3
- Vishay Siliconix TrenchFET N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3
- Vishay Siliconix TrenchFET N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3
- Vishay Siliconix TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3