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Vishay E Type N-Channel MOSFET, 25 A, 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3

RS stock no.:: 124-2251
Mfr. Part No.:: SIHH26N60E-T1-GE3
Manufacturer:: Vishay

Vishay E Type N-Channel MOSFET, 25 A, 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3

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Bulk discount available

Subtotal (1 unit)*

R 106,35

(exc. VAT)

R 122,30

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 15 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 99	R 106.35
100 - 499	R 103.69
500 - 999	R 100.58
1000 - 2999	R 96.56
3000 +	R 92.70

*price indicative

RS stock no.:: 124-2251
Mfr. Part No.:: SIHH26N60E-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK
	Series	E
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	135mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	77nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	202W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	8.1mm
	Width	8.1 mm
	Height	1mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK
	Series E
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 135mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 77nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 202W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 8.1mm
	Width 8.1 mm
	Height 1mm
	Automotive Standard No

COO (Country of Origin):: TW

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

Vishay E Type N-Channel MOSFET, 25 A, 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3

FREE delivery for orders over R 1,500.00

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

Features

MOSFET Transistors, Vishay Semiconductor

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