STMicroelectronics SCT Type N-Channel SiC Power Module, 16 A, 1200 V Depletion, 3-Pin Hip-247
- RS stock no.:
- 202-4778
- Mfr. Part No.:
- SCT20N120AG
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 7 679,88
(exc. VAT)
R 8 831,86
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 19 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tube(s) | Per Tube | Per unit* |
|---|---|---|
| 1 - 3 | R 7,679.88 | R 255.996 |
| 4 - 8 | R 7,487.88 | R 249.596 |
| 9 - 16 | R 7,263.24 | R 242.108 |
| 17 - 33 | R 6,972.71 | R 232.424 |
| 34 + | R 6,693.80 | R 223.127 |
*price indicative
- RS stock no.:
- 202-4778
- Mfr. Part No.:
- SCT20N120AG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.52Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 153W | |
| Forward Voltage Vf | 3.6V | |
| Maximum Operating Temperature | 200°C | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 15.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.52Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 153W | ||
Forward Voltage Vf 3.6V | ||
Maximum Operating Temperature 200°C | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 15.8mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Very fast and robust intrinsic body diode
Low capacitance
Related links
- STMicroelectronics SCT SiC N-Channel SiC Power Module 1200 V Depletion, 3-Pin HiP247 SCT20N120AG
- STMicroelectronics SCT SiC N-Channel SiC Power Module 1200 V Depletion, 3-Pin HiP247 SCT10N120AG
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 3-Pin HiP247 SCT50N120
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 3-Pin HiP247 SCT10N120
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 3-Pin HiP247 SCTWA20N120
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 3-Pin HiP247 SCTW40N120G2VAG
- STMicroelectronics SCT SiC N-Channel MOSFET Module 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 7-Pin HIP247 3pins SCTW100N65G2AG