STMicroelectronics SCT Type N-Channel MOSFET, 33 A, 1200 V Depletion, 3-Pin Hip-247
- RS stock no.:
- 202-5489
- Mfr. Part No.:
- SCTW40N120G2VAG
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 9 180,09
(exc. VAT)
R 10 557,09
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 31 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 306.003 | R 9,180.09 |
| 120 - 240 | R 298.353 | R 8,950.59 |
| 270 - 480 | R 289.402 | R 8,682.06 |
| 510 - 990 | R 277.826 | R 8,334.78 |
| 1020 + | R 266.713 | R 8,001.39 |
*price indicative
- RS stock no.:
- 202-5489
- Mfr. Part No.:
- SCTW40N120G2VAG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 3.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 290W | |
| Maximum Operating Temperature | 200°C | |
| Height | 34.95mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 3.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 290W | ||
Maximum Operating Temperature 200°C | ||
Height 34.95mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Automotive Standard No | ||
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
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