Vishay SQS484CENW Type N-Channel MOSFET, 16 A, 40 V Enhancement, 8-Pin PowerPAK 1212
- RS stock no.:
- 200-6851
- Mfr. Part No.:
- SQS484CENW-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 680,80
(exc. VAT)
R 782,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 28 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 13.616 | R 680.80 |
| 100 - 450 | R 13.276 | R 663.80 |
| 500 - 950 | R 12.878 | R 643.90 |
| 1000 - 1450 | R 12.362 | R 618.10 |
| 1500 + | R 11.868 | R 593.40 |
*price indicative
- RS stock no.:
- 200-6851
- Mfr. Part No.:
- SQS484CENW-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQS484CENW | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.4mm | |
| Width | 1.12 mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQS484CENW | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 62.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 3.4mm | ||
Width 1.12 mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQS484CENW-T1_GE3 is a automotive N-channel 40V (D-S) 175°C MOSFET.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Related links
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8W SQS484CENW-T1_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 250 V, 3-Pin DPAK SQD10950E_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 60 V, 3-Pin D2PAK SQM50034EL_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 60 V, 3-Pin DPAK SQD50034EL_GE3
- Vishay Dual Silicon N-Channel MOSFET 80 V, 8-Pin PowerPAK 1212-8W SQSA82CENW-T1_GE3
- Vishay TrenchFET Dual N-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8W SQSA12CENW-T1_GE3
- Vishay TrenchFET Dual N-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8W SQS486CENW-T1_GE3