Vishay TrenchFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS660CENW-T1_GE3

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Subtotal (1 pack of 10 units)*

R 152,31

(exc. VAT)

R 175,16

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
Last RS stock
  • Final 2,780 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 40R 15.231R 152.31
50 - 90R 14.85R 148.50
100 - 240R 14.404R 144.04
250 - 990R 13.828R 138.28
1000 +R 13.275R 132.75

*price indicative

Packaging Options:
RS stock no.:
228-2968
Mfr. Part No.:
SQS660CENW-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

17.4nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET automotive N-channel is 60 V power MOSFET.

100 % Rg and UIS tested

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