Vishay TrenchFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS660CENW-T1_GE3

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Subtotal (1 pack of 10 units)*

R 156,61

(exc. VAT)

R 180,10

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
10 - 40R 15.661R 156.61
50 - 90R 15.269R 152.69
100 - 240R 14.811R 148.11
250 - 990R 14.219R 142.19
1000 +R 13.65R 136.50

*price indicative

Packaging Options:
RS stock no.:
228-2968
Mfr. Part No.:
SQS660CENW-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17.4nC

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET automotive N-channel is 60 V power MOSFET.

100 % Rg and UIS tested

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