Vishay EF Type N-Channel Power MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220AB SIHP186N60EF-GE3

RS stock no.:: 200-6818
Mfr. Part No.:: SIHP186N60EF-GE3
Manufacturer:: Vishay

Vishay EF Type N-Channel Power MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220AB SIHP186N60EF-GE3

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Subtotal (1 reel of 50 units)*

R 1 738,00

(exc. VAT)

R 1 998,50

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

950 unit(s) ready to ship from another location

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Units	Per unit	Per Reel*
50 +	R 34.76	R 1,738.00

*price indicative

RS stock no.:: 200-6818
Mfr. Part No.:: SIHP186N60EF-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	193mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	32nC
	Maximum Power Dissipation Pd	156W
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	4.65mm
	Height	14.4mm
	Length	10.52mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 193mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 32nC
	Maximum Power Dissipation Pd 156W
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 4.65mm
	Height 14.4mm
	Length 10.52mm
	Automotive Standard No

Document- SIHP186N60EF-GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 18A Drain Current - SIHP186N60EF-GE3

This power MOSFET is a high-voltage switching device designed for demanding power-electronic roles in industrial systems. It functions as an N-channel enhancement-mode transistor for control of high-voltage DC loads and switching stages, intended for through-hole mounting in equipment where robust conduction and thermal handling are required.

Features and Benefits:

• 650V maximum drain voltage enables high-voltage switching
• 18A continuous drain current supports substantial load currents
• 193mΩ RDS(on) reduces conduction losses during operation
• 32nC typical gate charge enables predictable switching performance
• 156W maximum power dissipation aids thermal design choices
• 30V gate tolerance allows flexible drive voltage ranges

Applications

• Suitable for high-voltage inverter front ends in industrial drives
• Ideal for switch-mode power supplies handling elevated DC bus voltages
• Used for discrete power stages in automation and motor-control units
• Can be used for load-switching in power distribution modules

What operating temperature range can it withstand?

It operates from -55°C to 150°C, enabling use across varied thermal environments and elevated-temperature applications.

How is the device intended to be mounted in equipment?

It is supplied in a through-hole TO-220AB package with three pins suitable for secure board mounting and straightforward heatsinking options.

What is the expected gate drive characteristic for switching design?

With a typical gate charge of 32nC at rated conditions, designers can estimate gate-drive energy and choose appropriate drivers for target switching speeds.

What mechanical footprint considerations should be noted?

The package presents Compact external dimensions with a moderate profile, facilitating integration where vertical clearance and board retention are factors.