Vishay EF Type N-Channel MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-220 SIHP125N60EF-GE3

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Subtotal (1 reel of 50 units)*

R 3 681,45

(exc. VAT)

R 4 233,65

(inc. VAT)

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Units
Per unit
Per Reel*
50 +R 73.629R 3,681.45

*price indicative

RS stock no.:
200-6816
Mfr. Part No.:
SIHP125N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

650V

Series

EF

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

47nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHP125N60EF-GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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