Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

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Subtotal (1 pack of 5 units)*

R 141,06

(exc. VAT)

R 162,22

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 28.212R 141.06
10 - 95R 27.506R 137.53
100 - 245R 26.68R 133.40
250 - 495R 25.612R 128.06
500 +R 24.588R 122.94

*price indicative

Packaging Options:
RS stock no.:
210-4963
Mfr. Part No.:
SiHA186N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

168mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

33W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.3mm

Length

28.1mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has Thin-Lead TO-220 FULLPAK package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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