onsemi NTMJS1D0N04C Type N-Channel MOSFET, 300 A, 40 V Enhancement, 8-Pin LFPAK NTMJS1D0N04CTWG
- RS stock no.:
- 189-0506
- Mfr. Part No.:
- NTMJS1D0N04CTWG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 254,58
(exc. VAT)
R 292,765
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 17 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 50.916 | R 254.58 |
| 10 - 95 | R 49.644 | R 248.22 |
| 100 - 245 | R 48.154 | R 240.77 |
| 250 - 995 | R 46.228 | R 231.14 |
| 1000 + | R 44.378 | R 221.89 |
*price indicative
- RS stock no.:
- 189-0506
- Mfr. Part No.:
- NTMJS1D0N04CTWG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMJS1D0N04C | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 920μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 166W | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMJS1D0N04C | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 920μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 166W | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK-E Package, Industry Standard
These Devices are Pb-Free
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