onsemi NVMJS1D3N04C Type N-Channel MOSFET, 235 A, 40 V Enhancement, 8-Pin LFPAK NVMJS1D3N04CTWG
- RS stock no.:
- 185-9186
- Mfr. Part No.:
- NVMJS1D3N04CTWG
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 4 units)*
R 135,12
(exc. VAT)
R 155,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,740 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 36 | R 33.78 | R 135.12 |
| 40 - 396 | R 32.935 | R 131.74 |
| 400 - 1996 | R 31.948 | R 127.79 |
| 2000 - 3996 | R 30.67 | R 122.68 |
| 4000 + | R 29.443 | R 117.77 |
*price indicative
- RS stock no.:
- 185-9186
- Mfr. Part No.:
- NVMJS1D3N04CTWG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 235A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NVMJS1D3N04C | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 128W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 235A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NVMJS1D3N04C | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 128W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
- COO (Country of Origin):
- PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free
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