onsemi NVMJS1D5N04CL Type N-Channel MOSFET, 200 A, 40 V Enhancement, 8-Pin LFPAK NVMJS1D5N04CLTWG
- RS stock no.:
- 195-2509
- Mfr. Part No.:
- NVMJS1D5N04CLTWG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 212,18
(exc. VAT)
R 244,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,960 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 10.609 | R 212.18 |
| 100 - 480 | R 10.344 | R 206.88 |
| 500 - 980 | R 10.034 | R 200.68 |
| 1000 - 1480 | R 9.632 | R 192.64 |
| 1500 + | R 9.247 | R 184.94 |
*price indicative
- RS stock no.:
- 195-2509
- Mfr. Part No.:
- NVMJS1D5N04CLTWG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMJS1D5N04CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMJS1D5N04CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 4.9 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.15mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead, dual cool package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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