Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die
- RS stock no.:
- 188-5065
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 356,41
(exc. VAT)
R 409,87
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 40 unit(s) shipping from 20 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 71.282 | R 356.41 |
| 50 - 95 | R 69.50 | R 347.50 |
| 100 + | R 67.414 | R 337.07 |
*price indicative
- RS stock no.:
- 188-5065
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TrenchFET | |
| Package Type | Triple Die | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 0.79V | |
| Minimum Operating Temperature | 175°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Common Drain | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 3 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TrenchFET | ||
Package Type Triple Die | ||
Mount Type Surface | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 0.79V | ||
Minimum Operating Temperature 175°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Common Drain | ||
Standards/Approvals No | ||
Number of Elements per Chip 3 | ||
Automotive Standard AEC-Q101 | ||
Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET.
Optimized triple die package
TrenchFET® power MOSFET
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