MPN

Vishay Siliconix Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ504EP-T1_GE3

RS stock no.:: 178-3893
Mfr. Part No.:: SQJ504EP-T1_GE3
Manufacturer:: Vishay Siliconix

Vishay Siliconix Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ504EP-T1_GE3

Image representative of range

Bulk discount available

View bulk pricing option

Subtotal (1 pack of 10 units)*

R 205,91

(exc. VAT)

R 236,80

(inc. VAT)

FREE delivery for orders over R 1,500.00

Supply shortage

Plus 30 left, shipping from 01 June 2026
Plus 1,400 left, shipping from 08 June 2026

Our current stock is limited and our suppliers are expecting shortages.

Units	Per unit	Per Pack*
10 - 90	R 20.591	R 205.91
100 - 490	R 20.076	R 200.76
500 - 990	R 19.474	R 194.74
1000 +	R 18.695	R 186.95

*price indicative

RS stock no.:: 178-3893
Mfr. Part No.:: SQJ504EP-T1_GE3
Manufacturer:: Vishay Siliconix

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	40V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12.1nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	34W
	Maximum Operating Temperature	175°C
	Transistor Configuration	Dual
	Height	1.07mm
	Length	5.99mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay Siliconix
	Product Type MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 40V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12.1nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 34W
	Maximum Operating Temperature 175°C
	Transistor Configuration Dual
	Height 1.07mm
	Length 5.99mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet

Exempt

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount dual channel (both N and P-channels) MOSFET is a new age product with a drain-source voltage of 40V. It has drain-source resistance of 17mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 34W and a continuous drain current of 30A. The MOSFET has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in the automotive industry.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications

• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy