Vishay SiHG21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247 SIHG21N80AE-GE3

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Subtotal (1 pack of 2 units)*

R 260,92

(exc. VAT)

R 300,06

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 130.46R 260.92
10 +R 127.20R 254.40

*price indicative

Packaging Options:
RS stock no.:
188-4989
Mfr. Part No.:
SIHG21N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Series

SiHG21N80AE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

235mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

48nC

Maximum Power Dissipation Pd

32W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

15.87mm

Width

5.31 mm

Height

20.82mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-38-848

E Series Power MOSFET.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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