Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247 SIHG15N80AE-GE3

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Subtotal (1 pack of 5 units)*

R 323,05

(exc. VAT)

R 371,50

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 64.61R 323.05
10 - 95R 62.994R 314.97
100 - 245R 61.104R 305.52
250 - 495R 58.66R 293.30
500 +R 56.314R 281.57

*price indicative

Packaging Options:
RS stock no.:
210-4984
Mfr. Part No.:
SIHG15N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

304mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

35nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

28.6mm

Height

4.6mm

Width

15.5 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has TO-247AC package type with 13 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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