Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3
- RS stock no.:
- 210-4984
- Mfr. Part No.:
- SIHG15N80AE-GE3
- Manufacturer:
- Vishay
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 339,10
(exc. VAT)
R 389,95
(inc. VAT)
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In Stock
- Plus 195 unit(s) shipping from 22 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 67.82 | R 339.10 |
| 10 - 95 | R 66.124 | R 330.62 |
| 100 - 245 | R 64.14 | R 320.70 |
| 250 - 495 | R 61.574 | R 307.87 |
| 500 + | R 59.112 | R 295.56 |
*price indicative
- RS stock no.:
- 210-4984
- Mfr. Part No.:
- SIHG15N80AE-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Length | 28.6mm | |
| Width | 15.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Length 28.6mm | ||
Width 15.5mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHG15N80AE-GE3
This power MOSFET is a high-voltage switching transistor designed for industrial and power-conversion roles where robust drain-source blocking is required. It operates as an N-channel enhancement device in a through-hole TO-247AC package, offering suitability for discrete power stages and retrofit designs that require a removable power component.
Features and Benefits:
• 800V drain-source rating for high-voltage switching capability • 13 A continuous drain current for steady load operation • 304 mΩ Rds(on) reduces conduction losses in power paths • 35 nC typical gate charge enables predictable drive requirements • 156W power dissipation supports elevated power throughput • 30V maximum gate-source voltage permits standard gate-drive voltages
Applications
• Suitable for industrial motor drive front-ends in automation systems • Ideal for high-voltage power supplies and DC-DC converters • Used for soft-switching stages in power electronics research • Can be used for prototype and repair tasks requiring through-hole mounting
What temperature range can it tolerate during operation?
It functions across a -55 °C to 150 °C operating range, allowing use in environments with wide thermal variation.
What mounting style is required for PCB implementation?
The device is intended for through-hole mounting in a TO-247AC footprint, facilitating sturdy mechanical attachment and heat-sink integration.
How many electrical connections does it present to the board?
Three pins provide drain, gate and source connections consistent with conventional transistor layouts.
What gate-drive considerations should designers note?
Designers should ensure gate-drive amplitudes do not exceed 30V and account for the 35 nC typical gate charge when sizing driver currents.
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