Vishay E Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

R 2 282,65

(exc. VAT)

R 2 625,05

(inc. VAT)

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Last RS stock
  • Final 2,750 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
50 - 50R 45.653R 2,282.65
100 +R 44.511R 2,225.55

*price indicative

RS stock no.:
210-4976
Mfr. Part No.:
SIHB21N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

48nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

4.06mm

Width

9.65 mm

Length

14.61mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 17.4 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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