MPN

Vishay E Type N-Channel Power MOSFET, 30 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3

RS stock no.:: 188-4970
Mfr. Part No.:: SIHA100N60E-GE3
Manufacturer:: Vishay

Vishay E Type N-Channel Power MOSFET, 30 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 2 units)*

R 193,04

(exc. VAT)

R 222,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

1,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 8	R 96.52	R 193.04
10 - 18	R 94.105	R 188.21
20 +	R 91.28	R 182.56

*price indicative

RS stock no.:: 188-4970
Mfr. Part No.:: SIHA100N60E-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	33nC
	Maximum Power Dissipation Pd	35W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.3mm
	Height	15.3mm
	Width	4.7 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 33nC
	Maximum Power Dissipation Pd 35W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.3mm
	Height 15.3mm
	Width 4.7 mm
	Automotive Standard No

Datasheet SIHA100N60E-GE3

E Series Power MOSFET.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

Vishay E Type N-Channel Power MOSFET, 30 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3

FREE delivery for orders over R 1,500.00

Related links