Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK
- RS stock no.:
- 188-4879
- Mfr. Part No.:
- SIHU4N80AE-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tube of 75 units)*
R 1 766,925
(exc. VAT)
R 2 031,975
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | R 23.559 | R 1,766.93 |
| 150 - 450 | R 22.97 | R 1,722.75 |
| 525 - 975 | R 22.281 | R 1,671.08 |
| 1050 - 2475 | R 21.389 | R 1,604.18 |
| 2550 + | R 20.534 | R 1,540.05 |
*price indicative
- RS stock no.:
- 188-4879
- Mfr. Part No.:
- SIHU4N80AE-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SiHU4N80AE | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.44Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Width | 2.38 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SiHU4N80AE | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.44Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Width 2.38 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
E Series Power MOSFET
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Related links
- Vishay N-Channel MOSFET 800 V, 3-Pin IPAK SIHU4N80AE-GE3
- Vishay N-Channel MOSFET 800 V, 3-Pin TO-220AB IRFBE30PBF
- Vishay SiHU5N80AE N-Channel MOSFET 800 V, 3-Pin IPAK SIHU5N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin IPAK SIHU2N80AE-GE3
- Infineon CoolMOS™ Silicon N-Channel MOSFET 800 V, 3-Pin IPAK IPU80R4K5P7AKMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin IPAK IPS80R900P7AKMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin IPAK IPU80R900P7AKMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode 800 V, 3-Pin IPAK IPU80R750P7AKMA1