Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3
- RS stock no.:
- 210-4997
- Mfr. Part No.:
- SIHU2N80AE-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 178,09
(exc. VAT)
R 204,80
(inc. VAT)
Add 90 units to get free delivery
Being discontinued
- Final 2,700 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 17.809 | R 178.09 |
| 20 - 90 | R 17.364 | R 173.64 |
| 100 - 490 | R 16.843 | R 168.43 |
| 500 - 990 | R 16.169 | R 161.69 |
| 1000 + | R 15.522 | R 155.22 |
*price indicative
- RS stock no.:
- 210-4997
- Mfr. Part No.:
- SIHU2N80AE-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Height | 2.18mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Height 2.18mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has IPAK (TO-251) package type.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Related links
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay SiHD2N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3
- Vishay SiHD2N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220