Vishay IRFBE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220 IRFBE30PBF
- RS stock no.:
- 541-1124
- Distrelec Article No.:
- 171-15-208
- Mfr. Part No.:
- IRFBE30PBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 35,81
(exc. VAT)
R 41,18
(inc. VAT)
Add 43 units to get free delivery
In Stock
- 149 unit(s) ready to ship from another location
- Plus 1,534 unit(s) shipping from 20 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | R 35.81 |
| 25 - 99 | R 34.91 |
| 100 - 249 | R 33.86 |
| 250 - 499 | R 32.51 |
| 500 + | R 31.21 |
*price indicative
- RS stock no.:
- 541-1124
- Distrelec Article No.:
- 171-15-208
- Mfr. Part No.:
- IRFBE30PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | IRFBE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series IRFBE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRFBE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Vishay IRFBE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Vishay IRFBE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IRFBE20PBF
- Vishay IRFBE Type N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB
- Vishay IRFBE Type N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB
- Vishay IRFBE Type N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB IRFBF30PBF
- Vishay IRFBE Type N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB IRFBF20PBF
- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3