Vishay SiHU5N80AE Type N-Channel MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK

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Subtotal 100 units (supplied on a continuous strip)*

R 913,20

(exc. VAT)

R 1 050,20

(inc. VAT)

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Units
Per unit
100 - 490R 9.132
500 - 990R 8.858
1000 - 1490R 8.504
1500 +R 8.164

*price indicative

Packaging Options:
RS stock no.:
204-7229P
Mfr. Part No.:
SIHU5N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Package Type

IPAK

Series

SiHU5N80AE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

6.22mm

Width

2.39 mm

Length

6.73mm

Automotive Standard

No

The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

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