Vishay SiHU5N80AE Type N-Channel MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3

Image representative of range

Bulk discount available
View bulk pricing option

Subtotal 100 units (supplied on a continuous strip)*

R 1 835,60

(exc. VAT)

R 2 110,90

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 20 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
100 - 490R 18.356
500 - 990R 17.805
1000 - 1490R 17.093
1500 +R 16.409

*price indicative

Packaging Options:
RS stock no.:
204-7229P
Mfr. Part No.:
SIHU5N80AE-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Series

SiHU5N80AE

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16.5nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

6.22mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy