Vishay TrenchFET Type P-Channel MOSFET, 14.9 A, 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3

RS stock no.:: 180-8134
Mfr. Part No.:: SI4825DDY-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 14.9 A, 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3

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Bulk discount available

Subtotal (1 pack of 10 units)*

R 151,49

(exc. VAT)

R 174,21

(inc. VAT)

FREE delivery for orders over R 1,500.00

Being discontinued

Final 2,150 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
10 - 40	R 15.149	R 151.49
50 - 90	R 14.77	R 147.70
100 - 490	R 14.327	R 143.27
500 - 990	R 13.754	R 137.54
1000 +	R 13.204	R 132.04

*price indicative

RS stock no.:: 180-8134
Mfr. Part No.:: SI4825DDY-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	14.9A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	20.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	29.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	3.2W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Height	1.75mm
	Standards/Approvals	No
	Width	6.2 mm
	Length	5mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 14.9A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 20.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 29.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 3.2W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Height 1.75mm
	Standards/Approvals No
	Width 6.2 mm
	Length 5mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has drain-source resistance of 12.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 14.9A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Load Switch

• Notebook Adaptor Switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested