Vishay TrenchFET Type P-Channel MOSFET, 19.7 A, 30 V Enhancement, 8-Pin SO-8 SI4425DDY-T1-GE3
- RS stock no.:
- 180-8062
- Mfr. Part No.:
- SI4425DDY-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 291,54
(exc. VAT)
R 335,28
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- 2,060 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 14.577 | R 291.54 |
| 40 - 80 | R 14.212 | R 284.24 |
| 100 - 480 | R 13.786 | R 275.72 |
| 500 - 980 | R 13.234 | R 264.68 |
| 1000 + | R 12.705 | R 254.10 |
*price indicative
- RS stock no.:
- 180-8062
- Mfr. Part No.:
- SI4425DDY-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Power Dissipation Pd | 3.6W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.2mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Power Dissipation Pd 3.6W | ||
Maximum Operating Temperature 150°C | ||
Width 6.2mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 9.8mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5.7W and continuous drain current of 19.7A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Desktop PCs
• Load switches
• Notebook PCs
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
Related links
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- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8
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- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212