Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2369DS-T1-GE3

RS stock no.:: 180-7798
Mfr. Part No.:: SI2369DS-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2369DS-T1-GE3

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Bulk discount available

Subtotal (1 pack of 25 units)*

R 140,80

(exc. VAT)

R 161,925

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

1,700 unit(s) shipping from 11 March 2026

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Units	Per unit	Per Pack*
25 - 25	R 5.632	R 140.80
50 - 75	R 5.492	R 137.30
100 - 475	R 5.327	R 133.18
500 - 975	R 5.114	R 127.85
1000 +	R 4.909	R 122.73

*price indicative

RS stock no.:: 180-7798
Mfr. Part No.:: SI2369DS-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.6A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.6W
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11.4nC
	Maximum Operating Temperature	150°C
	Width	2.64 mm
	Height	1.12mm
	Length	3.04mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.6A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.6W
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11.4nC
	Maximum Operating Temperature 150°C
	Width 2.64 mm
	Height 1.12mm
	Length 3.04mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source resistance of 29mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 30V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 7.6A and maximum power dissipation of 2.5W. MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converter

• For mobile computing

• Load switch

• Notebook adaptor switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested