Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3
- RS stock no.:
- 812-3139
- Mfr. Part No.:
- SI2365EDS-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
R 298,05
(exc. VAT)
R 342,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 50 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 250 | R 5.961 | R 298.05 |
| 300 - 550 | R 5.812 | R 290.60 |
| 600 - 1450 | R 5.637 | R 281.85 |
| 1500 - 2950 | R 5.412 | R 270.60 |
| 3000 + | R 5.195 | R 259.75 |
*price indicative
- RS stock no.:
- 812-3139
- Mfr. Part No.:
- SI2365EDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0675Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 13.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0675Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 13.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.02mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
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Related links
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