Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3

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Subtotal (1 pack of 50 units)*

R 216,70

(exc. VAT)

R 249,20

(inc. VAT)

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Being discontinued
  • Final 56,500 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
50 - 250R 4.334R 216.70
300 - 550R 4.225R 211.25
600 - 1450R 4.099R 204.95
1500 - 2950R 3.935R 196.75
3000 +R 3.777R 188.85

*price indicative

Packaging Options:
RS stock no.:
812-3139
Mfr. Part No.:
SI2365EDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

5.9A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.0675Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

-50°C

Maximum Power Dissipation Pd

1.7W

Typical Gate Charge Qg @ Vgs

13.8nC

Forward Voltage Vf

-0.8V

Maximum Operating Temperature

150°C

Height

1.02mm

Width

1.4 mm

Length

3.04mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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