Vishay TrenchFET Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3
- RS stock no.:
- 180-7738
- Mfr. Part No.:
- SI2307CDS-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 198,05
(exc. VAT)
R 227,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 75 unit(s) ready to ship from another location
- Plus 225 unit(s) shipping from 21 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.922 | R 198.05 |
| 50 - 75 | R 7.724 | R 193.10 |
| 100 - 475 | R 7.493 | R 187.33 |
| 500 - 975 | R 7.193 | R 179.83 |
| 1000 + | R 6.906 | R 172.65 |
*price indicative
- RS stock no.:
- 180-7738
- Mfr. Part No.:
- SI2307CDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 138mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 1.14W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 3.04mm | |
| Width | 2.64mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 138mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 1.14W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 3.04mm | ||
Width 2.64mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 88mohm at a gate-source voltage of 10V. It has continuous drain current of 3.5A and a maximum power rating of 1.8W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
Related links
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23