onsemi Dual 2 Type N-Channel Power MOSFET, 27 A, 40 V Enhancement, 8-Pin DFN NVMFD5C478NT1G
- RS stock no.:
- 178-4488
- Mfr. Part No.:
- NVMFD5C478NT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 245,49
(exc. VAT)
R 282,31
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 08 March 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 24.549 | R 245.49 |
| 100 - 240 | R 23.935 | R 239.35 |
| 250 - 490 | R 23.217 | R 232.17 |
| 500 - 990 | R 22.288 | R 222.88 |
| 1000 + | R 21.396 | R 213.96 |
*price indicative
- RS stock no.:
- 178-4488
- Mfr. Part No.:
- NVMFD5C478NT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.84V | |
| Minimum Operating Temperature | 175°C | |
| Maximum Power Dissipation Pd | 23W | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Length | 5.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.84V | ||
Minimum Operating Temperature 175°C | ||
Maximum Power Dissipation Pd 23W | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Length 5.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C478NWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
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