Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3
- RS stock no.:
- 178-3920
- Mfr. Part No.:
- SiSS12DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 187,31
(exc. VAT)
R 215,41
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 14,910 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 18.731 | R 187.31 |
| 100 - 490 | R 18.263 | R 182.63 |
| 500 - 990 | R 17.715 | R 177.15 |
| 1000 + | R 17.006 | R 170.06 |
*price indicative
- RS stock no.:
- 178-3920
- Mfr. Part No.:
- SiSS12DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65.7W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.07mm | |
| Length | 3.15mm | |
| Width | 3.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65.7W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.07mm | ||
Length 3.15mm | ||
Width 3.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Exempt
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
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