Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET, 38 A, 60 V Enhancement, 8-Pin PowerPAIR 3 x 3FDC
- RS stock no.:
- 200-6874
- Mfr. Part No.:
- SiZ250DT-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 446,80
(exc. VAT)
R 513,825
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 06 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | R 17.872 | R 446.80 |
| 100 - 475 | R 17.426 | R 435.65 |
| 500 - 975 | R 16.903 | R 422.58 |
| 1000 - 1475 | R 16.227 | R 405.68 |
| 1500 + | R 15.578 | R 389.45 |
*price indicative
- RS stock no.:
- 200-6874
- Mfr. Part No.:
- SiZ250DT-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAIR 3 x 3FDC | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01887Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 33W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 0.75mm | |
| Width | 3.3 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAIR 3 x 3FDC | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01887Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 33W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 0.75mm | ||
Width 3.3 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay SiZ250DT-T1-GE3 is a dual N-channel 60V (D-S) MOSFETs.
TrenchFET Gen IV power MOSFETs
100 % Rg and UIS tested
Optimized Qgs/Qgs ratio improves switching
characteristics
Related links
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