Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3

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Subtotal (1 pack of 10 units)*

R 186,61

(exc. VAT)

R 214,60

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 18.661R 186.61
50 - 90R 18.194R 181.94
100 - 490R 17.648R 176.48
500 - 990R 16.942R 169.42
1000 +R 16.264R 162.64

*price indicative

Packaging Options:
RS stock no.:
178-3895
Mfr. Part No.:
SiR188DP-T1-RE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

29nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.07mm

Length

5.99mm

Width

5 mm

Automotive Standard

No

Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

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