Vishay Siliconix TrenchFET Type N-Channel MOSFET, 14.4 A, 250 V Enhancement, 8-Pin SO-8 Si7190ADP-T1-RE3
- RS stock no.:
- 178-3875
- Mfr. Part No.:
- Si7190ADP-T1-RE3
- Manufacturer:
- Vishay Siliconix
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 148,23
(exc. VAT)
R 170,465
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 23 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 29.646 | R 148.23 |
| 50 - 95 | R 28.904 | R 144.52 |
| 100 - 495 | R 28.036 | R 140.18 |
| 500 - 995 | R 26.914 | R 134.57 |
| 1000 + | R 25.838 | R 129.19 |
*price indicative
- RS stock no.:
- 178-3875
- Mfr. Part No.:
- Si7190ADP-T1-RE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14.4A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 56.8W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.99mm | |
| Height | 1.07mm | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14.4A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 56.8W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.99mm | ||
Height 1.07mm | ||
Width 5 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Exempt
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package
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