ROHM RD3P130SP Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 RD3P130SPTL1
- RS stock no.:
- 172-0398
- Mfr. Part No.:
- RD3P130SPTL1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 24 350,00
(exc. VAT)
R 28 000,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 5,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 9.74 | R 24,350.00 |
| 5000 - 5000 | R 9.497 | R 23,742.50 |
| 7500 + | R 9.212 | R 23,030.00 |
*price indicative
- RS stock no.:
- 172-0398
- Mfr. Part No.:
- RD3P130SPTL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | RD3P130SP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.4 mm | |
| Height | 2.3mm | |
| Length | 6.8mm | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series RD3P130SP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Width 6.4 mm | ||
Height 2.3mm | ||
Length 6.8mm | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
RD3P130SP is a Power MOSFET with Low on - resistance, suitable for Switching.
Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
Related links
- ROHM RD3P130SP Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 RD3P130SPTL1
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR5410TRPBF
- Infineon AUIRF Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 AUIRFR5410TRL
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon AUIRF Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Vishay SiHF9540S Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 SIHF9540STRL-GE3
- Vishay SiHF9540S Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263