Infineon AUIRF Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 AUIRFR5410TRL
- RS stock no.:
- 229-1742
- Mfr. Part No.:
- AUIRFR5410TRL
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 249,41
(exc. VAT)
R 286,82
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 8,540 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 49.882 | R 249.41 |
| 10 - 95 | R 48.634 | R 243.17 |
| 100 - 245 | R 47.174 | R 235.87 |
| 250 - 495 | R 45.288 | R 226.44 |
| 500 + | R 43.476 | R 217.38 |
*price indicative
- RS stock no.:
- 229-1742
- Mfr. Part No.:
- AUIRFR5410TRL
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | AUIRF | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 205mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 66W | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 6.73 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series AUIRF | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 205mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 66W | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 6.22mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 6.73 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon p channel MOSFET utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
It is lead free
It is RoHS compliant
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