DiodesZetex DMP Type P-Channel MOSFET, 17 A, 30 V Enhancement, 3-Pin TO-252 DMP3010LK3-13
- RS stock no.:
- 770-5178
- Mfr. Part No.:
- DMP3010LK3-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 140,14
(exc. VAT)
R 161,16
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 90 unit(s) ready to ship from another location
- Plus 1,880 unit(s) shipping from 23 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 14.014 | R 140.14 |
| 50 - 240 | R 13.664 | R 136.64 |
| 250 - 990 | R 13.254 | R 132.54 |
| 1000 - 2490 | R 12.724 | R 127.24 |
| 2500 + | R 12.215 | R 122.15 |
*price indicative
- RS stock no.:
- 770-5178
- Mfr. Part No.:
- DMP3010LK3-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMP | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 59.2nC | |
| Maximum Power Dissipation Pd | 3.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 6.2 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMP | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 59.2nC | ||
Maximum Power Dissipation Pd 3.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 6.2 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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