Toshiba Type P-Channel MOSFET, 60 A, 40 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

R 32 986,00

(exc. VAT)

R 37 934,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +R 16.493R 32,986.00

*price indicative

RS stock no.:
171-2414
Mfr. Part No.:
TJ60S04M3L
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Typical Gate Charge Qg @ Vgs

125nC

Maximum Power Dissipation Pd

90W

Maximum Operating Temperature

175°C

Length

6.5mm

Width

7 mm

Standards/Approvals

No

Height

2.3mm

Automotive Standard

AEC-Q101

Exempt

COO (Country of Origin):
JP
Applications

Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = -10 V)

Low leakage current: IDSS = -10 μA (max) (VDS = -40 V)

Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

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