Toshiba Type P-Channel MOSFET, 3.5 A, 60 V, 3-Pin SOT-23 SSM3J351R,LF(T
- RS stock no.:
- 236-3571
- Mfr. Part No.:
- SSM3J351R,LF(T
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 301,85
(exc. VAT)
R 347,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,550 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 6.037 | R 301.85 |
| 100 - 200 | R 5.886 | R 294.30 |
| 250 - 450 | R 5.709 | R 285.45 |
| 500 - 950 | R 5.481 | R 274.05 |
| 1000 + | R 5.262 | R 263.10 |
*price indicative
- RS stock no.:
- 236-3571
- Mfr. Part No.:
- SSM3J351R,LF(T
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 129mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15.1nC | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.4mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 129mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15.1nC | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 150°C | ||
Length 2.4mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Automotive Standard AEC-Q101 | ||
The Toshiba field effect transistor MADE up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
Related links
- Toshiba Type P-Channel MOSFET 60 VLF(T
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